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GFB75N03
N-Channel Enhancement-Mode MOSFET
NCHT t RE FE duc T EN Pro G New
(R)
VDS 30V RDS(ON) 6.5m ID 80A
D
TO-263AB
0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.
D
G
0.160 (4.06) 0.190 (4.83)
0.045 (1.14) 0.055 (1.40)
S
0.42 (10.66)
0.320 (8.13) 0.360 (9.14)
G PIN D S
0.575 (14.60) 0.625 (15.88)
0.055 (1.39) 0.066 (1.68)
Dimensions in inches and (millimeters)
0.63 (17.02)
0.33 (8.38)
Seating Plate
-T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940)
0.120 (3.05) 0.155 (3.94)
0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30)
0.08 (2.032) 0.24 (6.096) 0.12 (3.05)
Mounting Pad Layout
Mechanical Data
Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Mounting Position: Any Weight: 1.3g
Features
* Advanced Trench Process Technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for Low Voltage DC/DC Converters * Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25C TA = 100C Symbol VDS VGS ID IDM PD TJ, Tstg TL RJC
(2)
Limit 30 20 80 240 69.4 27.8 -55 to 150 275 1.8 40
Unit V
A W C C C/W C/W 5/1/01
Operating Junction and Storage Temperature Range Lead Temperature (1/8" from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
RJA
Notes: (1) Maximum DC current limited by the package (2) 1-in2 2oz. Cu PCB mounted
GFB75N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25C unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage On-State Drain Current
(1) (1)
Symbol
Test Condition
Min
Typ
Max
Unit
BVDSS RDS(on) VGS(th) IDSS IGSS ID(on) gfs
VGS = 0V, ID = 250A VGS = 10V, ID = 38A VGS = 4.5V, ID = 31A VDS = VGS, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS 5V, VGS = 10V VDS = 15V, ID = 38A
30 - - 1.0 - - 75 -
- 5.8 8.5 - - - - 61
- 6.5 9.5 3.0 1.0 100 - -
V m V A nA A S
Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS=15V, ID=38A, VGS=5V VDS = 15V, VGS = 10V ID = 38A
- - - - -
32.5 63 11 11 13 16 94 38 3240 625 285
46 90 - - 26 29 132 57 - - - pF ns nC
VDD = 15V, RL = 15 ID 1A, VGEN = 10V RG = 6 VDS = 15V, VGS = 0V f = 1.0MHZ
- - - - - -
Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage
Note: (1) Pulse test; pulse width 300 s, duty cycle 2%
IS VSD
- IS = 38A, VGS = 0V
- -
- 0.9
75 1.3
A V
VDD ton toff tr
90%
Switching Test Circuit
VGEN RG
VIN
D
RD VOUT
Switching Waveforms
td(on)
td(off)
tf 90 %
10% INVERTED 90%
Output, VOUT
DUT
10%
G
50% 50%
S
Input, VIN
10% PULSE WIDTH
GFB75N03
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Output Characteristics
100 10V 6.0V 4.5V 80 70 VDS = 10V 4.0V
Fig. 2 - Transfer Characteristics
ID -- Drain Source Current (A)
80 5.0V 3.5V 60
ID -- Drain Source Current (A)
60 50 40 30 25C 20 10 0 TJ = 125C --55C
40 3.0V 20 VGS = 2.5V 0 0 1 2 3 4
1
2
3
4
5
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 - Threshold Voltage vs. Temperature
V(th) -- Gate-to-Source Threshold Voltage (V)
1.7 ID = 250A 0.016 0.014
Fig. 4 - On-Resistance vs. Drain Current
RDS(ON) -- On-Resistance ()
1.5 1.3 1.1
0.012 0.01 VGS = 4.5V 0.008 0.006 0.004 0.002 0 VGS = 10V
0.9
0.7 0.5 --50
--25
0
25
50
75
100
125
150
0
20
40
60
80
100
TJ -- Junction Temperature (C)
ID -- Drain Current (A)
Fig. 5 - On-Resistance vs. Junction Temperature
1.6 VGS = 10V ID = 38A
RDS(ON) -- On-Resistance (Normalized)
1.4
1.2
1
0.8
0.6 --50
--25
0
25
50
75
100
125
150
TJ -- Junction Temperature (C)
GFB75N03
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 6 - On-Resistance vs. Gate-to-Source Voltage
0.03 ID = 38A 10
Fig. 7 - Gate Charge
VGS -- Gate-to-Source Voltage (V)
VDS = 15V ID = 38A 8
RDS(ON) -- On-Resistance ()
0.025 0.02
6
0.015 TJ = 125C
4
0.01 0.005
25C
2
0 2 4 6 8 10
0 0 10 20 30 40 50 60 70
VGS -- Gate-to-Source Voltage (V)
Qg -- Gate Charge (nC)
Fig. 8 - Capacitance
4000 3500 f = 1MHZ VGS = 0V Ciss 100
Fig. 9 - Source-Drain Diode Forward Voltage
VGS = 0V 10
2500 2000 1500 1000 Coss 500 0 Crss
IS -- Source Current (A)
C -- Capacitance (pF)
3000
1
TJ = 125C
0.1
25C
--55C
0.01 0 5 10 15 20 25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VDS -- Drain-to-Source Voltage (V)
VSD -- Source-to-Drain Voltage (V)
GFB75N03
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 10 - Breakdown Voltage vs. Junction Temperature
41 40 39 1
Fig. 11 - Transient Thermal Impedance
D = 0.5
RJA (norm) -- Normalized Thermal Impedance
BVDSS -- Breakdown Voltage (V)
ID = 250A
0.2 PDM 0.1 0.1 0.05 Single Pulse t1 t2 1. Duty Cycle, D = t1/t2 2. RJC (t) = RJC(norm) *RJC 3. RJC = 1.8C/W 4. TJ - TC = PDM * RJC (t) 0.01 0.0001 0.001 0.01 0.1 1 10
38
37
36 35 --50
--25
0
25
50
75
100
125
150
TJ -- Junction Temperature (C)
Pulse Duration (sec.)
Fig. 12 - Power vs. Pulse Duration
1000 Single Pulse RJA = 1.8C/W TC = 25C 1000
Fig. 13 - Maximum Safe Operating Area
800
ID -- Drain Current (A)
10
100
1m
10 m s
0
s
Power (W)
600
s
400
RDS(ON) Limit
10 VGS = 10V Single Pulse RJC = 1.8C/W TA = 25C 1 0.1 1 100ms DC
200
0 0.0001
0.001
0.01
0.1
1
10
10
100
Pulse Duration (sec.)
VDS -- Drain-Source Voltage (V)

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